| SCOPUS | GARUDA | WOS/PUBLONS | ORCID |
| Email : adhi.dwi.h@ugm.ac.id |
| Education Background : |
| Doctor, Ph.D, Department of Materials Engineering, The University of Tokyo, Japan, 2019 Master, M.Sc., Departemen Kimia, Universitas Gadjah Mada, 2015 Undergraduate, S.Si., Departemen Kimia, Universitas Gadjah Mada, 2012 |
| Research Interest : |
| Kimia Material, Bahan Semikonduktor, Thin Film, Sel Surya, Elektrolit Aktif meneliti tentang desain dan rekayasa material elektronik, modifikasi dan analisa |
| Research Cluster/Group : |
| Polymer, Material, Energy |
| List of Publications : |
| 2021 Natural Dyes: From Cotton Fabrics to Solar CellsI Kartini, AD Hatmanto Dyes and Pigments-Novel Applications and Waste Treatment 2020 Physical analysis of remained oxidation byproducts as the origins of lattice distortion at the surface of 4H-SiC by Fourier-transform infrared spectroscopyAD Hatmanto, K Kita Japanese Journal of Applied Physics 59 (SM), SMMA02 2020 Mechanical-stress-induced anomalous change of electrical characteristics of 4H-SiC (0001) NMOSFET fabricated on Al-implanted p-type wellQ Chu, AD Hatmanto, M Masunaga, A Shima, K Kita JSAP Annual Meetings Extended Abstracts The 67th JSAP Spring Meeting 2020 … 2019 Similarity and difference of the impact of ion implantation and thermal oxidation on the lattice structure of 4H-SiC (0001) surfaceAD Hatmanto, K Kita Applied Physics Express 12 (8), 085507 2019 The kinetics of lattice distortion introduction and lattice relaxation at the surface of thermally-oxidized 4H-SiC (0001)AD Hatmanto, K Kita Applied Physics Express 12 (5), 055505 2018 Significant Structural Distortion in the Surface Region of 4H-SiC Induced by Thermal Oxidation and Recovered by Ar AnnealingK Kita, AD Hatmanto ECS Transactions 86 (12), 63 2018 Thermal-oxidation-induced local lattice distortion at surface of 4H-SiC (0001) characterized by in-plane X-ray diffractometryAD Hatmanto, K Kita Applied Physics Express 11 (1), 011201 |